Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.
Фото: Majid Asgaripour / WANA (West Asia News Agency) via Reuters
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NASA leaders argued that it makes more sense to uncover problems and practice operations close to home, in Earth orbit, rather than discovering them for the first time while attempting a landing on the moon. If the faster launch tempo holds, Artemis IV and Artemis V together could give NASA two opportunities in 2028. Officials stressed that the timeline still depends on hardware readiness and safety reviews.，更多细节参见雷电模拟器官方版本下载
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